Measurement of Carrier Lifetime in 4H-SiC PiN Diodes Employing OCVD Method at Different Temperature

This paper reports on the measurement of carrier lifetime of a series of SiC PiN diodes by the open circuit voltage decay (OCVD) method. The author adopts the method of circuit using MOSFET to cut off open-circuit voltage across the packaged PiN diode, obtaining voltage decay curve and calculate the minority carrier lifetime of 720ns, and then this carrier lifetime are applied as parameters in ISE TCAD device simulation to get the voltage-current characteristics. That OCVD measurement for carrier lifetime is proved to be accurate because of coincidence of the simulation and experimental curves.