Design of Gate Driver and Power Device Evaluation Platform for SiC MOSFETS

This paper presents an active gate driver for Silicon Carbide (SiC) power MOSFET that is suitable for high-frequency and high voltage applications. In addition to providing stable switching voltage for SiC MOSFET, the proposed driver circuit mainly focuses on the protection function, including overcurrent protection and soft turning-off. Meanwhile, a double pulse test (DPT) fixture is built to evaluate the performance of SiC MOSFET and gate driver, based on which fault report could be given and the influence of different gate resistance on switching time, are analyzed. Both simulation results and experimental results are provided to verify the validity and feasibility of the gate driver circuit.