Characterization of the Grain-Boundary Free (100) Si Thin-Films Obtained by CW-Laser-Lateral Crystallization at Room Temperature in Air

The grain-boundary free (100) Si thin films grown by single scan of the cw-laser lateral crystallization (CLC) were investigated. Angular distribution of the sub-boundary length N(θ) in the grain-boundary free (100) area of a 74 x 83 μm2 was given by N(θ) = N₀ exp(-θ/a), where θ was the rotation angle of the sub-boundary, N₀ was 3 mm/°, and a was 2.75°. Moreover, sub-boundary free segments (> ~30 × 80 μm²) were also observed. These features suggest that the sub-boundaries affect little on TFT characteristics.