Defect Isolation Using FIB based TEM Sample Preparation Methodology for Yield and Reliability Improvement of Advanced Microprocessors

Shrinking device technology node and changing material build-up is making TEM sample preparation for defect detection very challenging. To overcome this, a focus ion beam (FIB) sample preparation methodology to reveal the defect without damaging or destroying the region of interest (ROI) is proposed. Two novel approaches are described and relevant failure analysis case studies are presented to demonstrate the applications.