Investigating the Doping Profiles in emerging Nanowire Junctionless Accumulation Mode FETs from the L-BTBT perspective

We present the essential doping profile guidelines of the channel and drain region in nanowire (NW) junctionless accumulation Mode FETs (JAMFETs) from the perspective of mitigating the detrimental lateral-band-to-band tunneling (L-BTBT) to achieve low OFF-state current (~5×10^-12 A). Our analysis shows that a gaussian doped drain extension region alleviates the L-BTBT in OFF-state and for negative gate voltages, whereas channel doping profile impacts the threshold voltage and source-channel barrier height without significantly affecting the L-BTBT.