BSIM-CMG Modeling for 3D NAND Cell with Macaroni Channel

In this paper, we developed a BSIM-CMG compact model for read operation of 3D NAND string and verified the model through the result of TCAD simulation. First we extracted the parameters for a NAND unit cell with macaroni channel. For the purpose of accuracy, we extracted the parameters in 3 steps and took the effects of each step (mobility degradation factor, short channel effects and so on) into account. Then by connecting the modeled cells, we verified string characteristics such as g_m variation along with the position of the selected cell and the coupling effect between neighboring word-lines and the floating node of the selected cell. This study would offer the convenience when modeling the program/erase operations.