Experimental results obtained by EUV laboratory tool at NewSUBARU

At the Himeji Institute of Technology (HIT) the EUVL Laboratory Tool which operates at the wavelength of 13.5 nm with the 0.1 numerical aperture by using 3-mirrors imaging system has been completed. In order to be competitive with other NGL technologies of EUV lithography tool should demonstrate the 70 nm pattern in the large exposure field, uniformity and CD controllability of the entitle exposure area, mask and wafer alignment accuracy, and throughput rapidly. This paper will describes results of some exposure experiments using the 3-aspherical EUVL tool installed in SR facility of NewSUBARU and present the future prospects of EUVL.