Surface modified SiO/sub 2/ xerogel films from HMDS/acetone for intermetal dielectrics

In this study, a novel sol-gel synthesis procedure using HMDS as surface modifier and acetone as solvent without solvent exchange step for the preparation of SiO/sub 2/ xerogel thin film is proposed. The concentration of modifying agent as HMDS was also optimized for the high porous SiO/sub 2/ xerogel film. The microstructural and electrical properties of SiO/sub 2/ xerogel films for applications as intermetal dielectrics according to the new method were studied.