Analytical Model for the SOI Lateral Power Device With Step Width Technique and High- ${k}$ Dielectric

An analytical model is proposed in this paper for optimizing the breakdown voltage (BV) and drift region doping concentration of a silicon-on-insulator (SOI) lateral power device with step width technique and high-
${k}$
dielectric (SWHK device). By solving the 3-D Poisson equation, the analytical potential and the electric field distribution are investigated. The optimal width of the silicon region of each zone is calculated to obtain the maximum BV and optimal drift region doping concentration. The analytical results are well matched with the simulation results, confirming the validity of the present model. The proposed analytical model reveals the influence of step number and permittivity of high-
${k}$
dielectric on the performances of the SWHK device and provides guidance for the optimal design of the SWHK device.