Comparison of Radiated Electromagnetic Interference (EMI) Generated by Power Converters with Silicon MOSFETs and GaN HEMTs

The increasing switching frequency of power converters always leads to severer radiated electromagnetic interference (EMI), especially with the boom of wide bandgap (WBG) devices. Therefore, the development of radiation model and the analysis of the influence of WBG devices on the radiated EMI is important. This paper proposed a technique of developing the radiation model and compared the radiated EMI generated by converters with silicon MOSFETs and GaN HEMTs. Experiments are carried out to verify the analysis.