Ka-Band GaN-on-Si 4W MMIC High Power Amplifier for Millimetre-wave Radar

This contribution presents the design of a Monolithic Microwave Integrated Circuits (MMIC) power amplifier (PA) developed for radar applications in the upper Ka-band (35GHz - 40GHz). The MMIC is designed by using a 0.1 μm Gallium Nitride on Silicon (GaN-on-Si) millimetre wave process and employs a single-ended, four-stage configuration for an enhanced gain. The designed power amplifier can provide 4W of output power with an associated gain of at least 19dB and minimum 25% of power added efficiency (PAE) in the targeted frequency range.