Two abnormal peaks induced by plasma process in the noise spectra of etched Si and Si/sub 1-x/Ge/sub x/

The impact of plasma damage on the flicker noise properties of Ti/p-Si and Ti/p-Si/sub 1-x/Ge/sub x/ (with x=0.05) Schottky junctions is investigated in this work. Two abnormal peaks are observed in the 1/f noise spectra at around 500 Hz and 10 kHz which are the characteristics of the plasma damage. These peaks are shown to be independent of the applied bias and Ge concentration. From the noise experimental data, the introduced noise during the plasma etching process is attributed to the recombination generation noise.