An E-band Fully-Integrated True Power Detector in 28nm CMOS

This paper presents the design of a power amplifier with a low-power fully-integrated E-band true power detector in a 28nm CMOS technology. The power detector is able to measure the true output power with a dynamic range of 27.2dB at a frequency of 75GHz for a linearity error of ±0.5dB. The detector has a low power consumption of 66μW and occupies an active area of 54x130μm². Furthermore, the integrated detector is able to measure antenna load variations. The power amplifier design uses capacitive neutralization for gain and stability enhancement and achieves a peak gain of 23.1dB. The measured Psat, OP1dB and peak PAE at 75GHz are 11.6dBm, 9.7 dBm and 22.8% respectively.