The subthreshold-to-linear transition in submicron MOSFETs at high temperature

The operation and modelling of submicron MOSFETs in the subthreshold-to-linear transition region is becoming a crucial issue, especially for deep-submicron or nanodevices that need to be operated at a low-voltages to reduce hot-carrier effects and degradation. The impact of high-temperature (200 C) operation in this transition region is discussed in this work.