An Organic RRAM Chip Fabricated Using Ink-jet Printer and its Readout Circuit for Data Storage

A RRAM has been recently emerged because of its high potential for future semiconductor memory technologies in 4.0 era. This article demonstrates a 16 $\times$ 16 crossbar-structured organic RRAM array fabricated from a composite of Au nanoparticle and P3HT polymer matrix and an electrode layer made using a commercial ink-jet printer of Epson T60. Electrical measurements indicated that the memory device can be reversibly switched at a voltage pulse of -5/5 V for $1 \mu \mathrm{s}$. The typical device exhibited highly reliable with the stable retention time characteristics with a large on/off current ratio of 2000 at 0.5 V. In addition, in order to demonstrate practical application of the organic RRAM device in data storage, an encoder system including a socket, readout circuit and a computer program was constructed. The difference in the resistance state of organic RRAM array can be sensed and converted to the binary values of “1” or “0” in ASCII table code thanks to the encoder system. The method described here can be contributed in the progress of study on the emerging memory for smart devices.