Super Steep Subthreshold Slope “PN-Body-Tied SOI-FET” for Ultralow Power IoT Edge Systems and RF Energy Harvesting

We have proposed the super steep subthreshold slope (SS) “PN-Body-Tied SOI-FET (PNBTFET)”. It shows the perfect DC characteristics as a steep SS device, which is one of hot topics on the current research of Si devices. It shows SS <; mV/Dec over 5 decades of the drain current with an ultralow drain voltage down to 0.1V. The steep SS on N-channel and also on the P-channel PNBT-FET have already been demonstrated. The CMOS with PNBT-FETs will open LSI with the ultralow power supply voltage around 0.1V, which is promising for the ultralow power IoT edge systems. The ultralow voltage rectification of the 10mV amplitude has also been confirmed with the MOS diode of the PNBT-FET. It is also promising for high efficiency rectification on RF energy harvesting. The research status on the PNBT-FET is reviewed as well.