Analysis of X-Ray Photo-Charge Induced Speckles in a Radiation Hardened CMOS Image Sensor

For the first time we collect photo-current induce by X-Ray in a CMOS Image Sensor (CIS). From measurement from on a range from 20 to 119 keV, integration time from 0.135 ms to 1.35ms and dose rate from 30 Gy/h to 30 kGy/h we highlight effects of energy, dose rate and integration time. We demonstrate that as integration time near 1 ms and a dose rate of 30 kGy/h a CIS can acquire image with only 23% of is dynamic use by photo-generated electrons.