A Line Tunneling Field-Effect Transistor Based on Misaligned Core–Shell Gate Architecture in Emerging Nanotube FETs

In this paper, a new architecture based on an intentional misalignment between the core and shell gate is presented for the nanotube tunnel field-effect transistor (NT-TFET). The misaligned core gate overlaps with the source region and facilitates line tunneling in the core-gate- source overlapped region significantly increasing the band-to-band tunneling (BTBT) rate. Using the calibrated 3-D simulations, we show that the proposed misaligned (MG) NT-TFET outperforms the conventional NT-TFET both in terms of static as well as dynamic performance. The MGNT-TFET exhibits an increased ON-state current by nearly 11 times as compared to the conventional NT-TFET with an ultrasteep subthreshold slope (minimum point subthresh-old swing of ~5 mV/dec and an average subthreshold slope of 15.5 mV/dec). The higher effective drive current also leads to an improved dynamic performance in the MGNT-TFET.