Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs and Si Negative-Capacitance FinFETs Considering Quantum-Confinement Effect

This paper investigates the fin-width (
$\text{W}_{\textsf {Fin}}$
) sensitivity of threshold voltage (
$\text{V}_{\textsf {T}}$
) for InGaAs and Si channel negative-capacitance FinFETs (NC-FinFETs) using a theoretically derived quantum subthreshold model corroborated with TCAD numerical simulation. Our study indicates that due to the action of negative capacitance, the NC-FinFET possesses smaller
$\text{V}_{\textsf {T}}$
sensitivity to
$\text{W}_{\textsf {Fin}}$
than the FinFET counterpart. In addition, we point out and demonstrate that a device design with higher internal voltage amplification can be utilized to further reduce the
$\text{V}_{\textsf {T}}$
sensitivity to
$\text{W}_{\textsf {Fin}}$
for NC-FinFETs. Our study may provide insights for future scaling of FinFETs.