Simulation Modelling and Study on the Impacts of Substrate Concentration and Gate Work Function in MOSFET having Doped-Pocket Substrate

This paper presents a detailed simulation modeling of doped-pocket Substrate MOSFET. A comparative analysis have been carried out on taking into account of some important device parameters such as gate work-function and acceptor concentration and their impacts on Device characteristics. Simulations have been performed by Silvaco ATLAS simulator. The Device characteristics of the doped- pocket substrate obtained in terms of gate biasing and drain biasing shows that it obeys the characteristics of the conventional MOSFET. With the decrease in channel length form 40nm to 20nm the drain current increases sharply. With increase in the acceptor concentration of the Substrate there is slight variation in drain current. Gate work function is varied from 4.4 to 5.2, with its increasing value the threshold voltage increases, thus sharper slope of output characteristics curve has been observed when it minimum.