Double Gate Graded Channel Negative Capacitance FET (DGGCNCFET): Performance Assessment for Low Power Digital/Analog Applications

Electrical characteristics of Double Gate Graded Channel Negative Capacitance Field Effect Transistor (DGGCNCFET) have been explored in this study to investigate the potential of DGGCNCFET for low voltage/power digital/analog applications. The device performance has been extensively studied by self-consistently solving Landau-Khalatnikov equation with TCAD models. Various metrics have been obtained for a wide range of ferroelectric layer thicknesses and drain bias voltages. It has been observed that DGGCNCFET exhibits substantial improvement for low voltage/power analog applications.