Impact of Extrinsic Reliability Issues including Radiation and Temperature on SiGe HBT

The reliability issues of SiGe HBT are classified as: intrinsic and extrinsic. In this paper the impact of extrinsic reliability issues i.e., radiation and temperature effects on SiGe HBT are analyzed. Accordingly, high frequency behavior and the power capability in SiGeHBTs at cryogenic temperature are also analyzed at high speed, standard, and breakdown.