An empirical nonlinear MESFET model based on multi-bias measurements

A successful modeling technique that leads to a highly accurate nonlinear MESFET model is presented. This model is implemented based on accurate device measurements at different bias voltages using an HP8510C network analyzer. The parameters of the most commonly used nonlinear empirical models like Curtice quadratic, Curtice cubic and Statz models are extracted using GASMAP and FETMEX programs. The best model has been determined and tested for DC and AC operation through computer simulation, which gave more accurate results than existing models. Then, it has been successfully applied in the design and realization of a microstrip oscillator at 8.5 GHz.