Temperature Reliability of Junctionless Twin Gate Recessed Channel (JL-TGRC) MOSFET with Different Gate Material for Low Power Digital-Logic Applications

In this work, the temperature reliability of junctionless twin gate recessed channel (JL-TGRC) MOSFET at high temperature for different materials have been realized for low power digital-logic applications. Along with thermal analysis, several gate materials (Au-ITO, Au-Mo, HfO₂-ZrO₂, SiC-SiC, ZrO₂-ZrO₂ and ITO-ITO) for their applicability in the domain of low voltage/power digital electronics have been discussed. ITO (Indium Tin Oxide) and ZrO₂ have been chosen among all the materials for further thermal analysis and is considered to be a promising gate material having fast responsive transfer characteristics with V_th = 0.2V and V_sat > 1V at 500K. Further, the device gives a full functionality of 2-input digital `AND' gate logic. All the simulations regarding thermal analysis, structure, and gate material applicability have been performed using Silvaco TCAD. Thus JL-TGRC MOSFET with swift characteristics is reliable for low power digital electronics applications.