Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film

Layered MoS2 film was formed on a SiO2 substrate by sputtering and Al2O3 film was deposited as passivation film on the MoS2 film, an annealing was performed in sulfur atmosphere in order to compensate sulfur defects and improve crystallinity. By annealing MoS2 film in sulfur atmosphere, crystallinity was improved by sulfur compensation even through Al2O3 film, and Hall-effect mobility of the MoS2 film increased than that prior to annealing. The high Hall-effect mobility values of 300 and 100 cm² V^-1s^-1 were remarkably achieved without and with 3-nm passivation film, respectively.