Monolithic-3D Integration with 2D Materials: Toward Ultimate Vertically-Scaled 3D-ICs

This paper evaluates the merits of incorporating two-dimensional (2D) materials into monolithic threedimensional integrated circuits (M3D-IC), in terms of overcoming the major drawbacks of current 3D-ICs, including low thermal process budget, inter-tier signal delay and chip overheating problems. Our analysis reveals for the first time that the 2D-based M3D integration can offer >10-folds higher integration density compared with through-silicon-via (TSV)based 3D integration, and >150% integration density improvement w.r.t conventional M3D integration. Therefore, 2D materials provide a better platform, with respect to bulk materials (such as Si, Ge, etc.), for realizing ultra-high-density M3D-ICs for next-generation electronics.