An analytical a-Si:H TFT DC/ capacitance model using an effective temperature approach for deriving a switching time model

This paper presents an analytical a-Si:H DC capacitance model using an effective temperature approach for deriving a switching time model for an inverter circuit considering deep and tail states. Based on the analytical model, the threshold voltage of an a-Si:H TFT is proportional to the deep state density and the switching time of the TFT inverter is dependent on the tail state density.