Impact of Sb Composition on Strain Profile of GaAs1-xSbx Capped InAs Quantum Dots

A detail theoretical investigation on strain distribution of InAs quantum dot (QD) capped with GaAs
_1-x
Sb
_x
has been carried out. The transition from type-I to type-II with varying Sb composition has been observed and demonstrated in terms of energy band profile and electron-hole probability density function. The effect of Sb composition on hydrostatic and biaxial strain and its outcome on optical properties has been analyzed in this study. The overall strain distribution was found to be minimum in QD heterostructures with Sb > 14%, which would improve carrier confinement and result in longer wavelength emission. The study of strain profile inside QD heterostructures would facilitate the researchers toward optimized designing of strain-coupled QD based devices, which could be utilized in infrared photodetector and quantum communication applications.