Silvaco Based Simulation of Unequal Double Gate Junctionless TFET with GaAs-GaSb Heterostructure

Tunneling field effect transistor (TFET) is thought to be a successor in future nanotechnology because of its low SS and off current. Junctionless TFETs are easier to fabricate and possess no random dopant fluctuations. In this paper a new heterostructure based junctionless device has been proposed with unequal gates. The proposed device has been compared with Si based TFET and equal gate TFETs. High ON current, promising ION/IoFF ratio and low negative bias current has been demonstrated.