A VCO with Dynamic Body Injection and Class-C Technique

This letter presents a 2.65 GHz Class-C voltage-controlled oscillator (VCO). The chip was implemented using the TSMC 0.18 UM BICMOS Mixed Signal SiGe General Purpose Standard Process FSG Al 3P6M 1.8&3.3V process. And a high-swing class-C oscillator is used to achieve the performance of low phase noise. The output phase noise of the VCO is -119.92dBc/Hz at 1MHz offset frequency, the output carrier frequency of 2.6576GHz and the figure of merit is -185.35 dBc/Hz. Total power consumption is 2mW. Tuning range is about 750MHz (24.7%) between 2.66 to 3.41 GHz, while the control voltage was tuned from 0 V to 1.8 V. The die area is 0.941×0.625 mm².