Transient and quasi-steady state simulation of Czochralski silicon single crystal growth

In this paper, we established a transient heat transfer model for a Czochralski furnace and compared it with steady-state simulations at different crystal heights. Both simulations showed the same qualitative results in Equal diameter stage with a temperature difference of less than 3K. However, in the shoulder-changing and tailing stages of the diameter change, the temperature, stress distribution, etc. show a qualitative difference between the transient and quasi-steady-state simulations. Therefore, dynamic research is better for strong transient phases with sharp changes in diameter.