SOI-CMOS High Power Rectifier IC with the Cross Coupled CMOS Pair

In this paper, the SOI-CMOS high power rectifier with the cross coupled CMOS pair is proposed. Compared with the gate controlled diode, the cross coupled CMOS pair has the higher performance in the forward bias condition as reported in past. We focus on the improved reverse bias characteristic of the cross coupled CMOS pair. In RF and dc simulations, effectiveness of the cross coupled CMOS pair can be confirmed for the high power operation. Furthermore evaluation results are indicated.