5G mm-Wave Stacked Class AB Power Amplifier in 45 nm PD-SOI CMOS

This paper presents a single-stage stacked Class AB power amplifier (PA) with lower complexity for fifth-generation (5G) K/K
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band front-ends that has been realized in a 45 nm PD-SOI CMOS technology. Measurement results show that the power amplifier achieves a saturated output power \pmb(Psat)) of 17.3 dBm with a 39.7 % maximum power-added efficiency (PAEmax) at 24 GHz. The output-referred 1-dB compression point (OP1dB) is 14.3 dBm and the saturated output power varies from 15.9 dBm to 17.3dBm for a frequency range from 22GHz to 28GHz. Furthermore, the circuit draws 40 mA from a 2.9 V supply and the chip core size is 0.35 mm x 0.25 mm.