Abstract:
The properties of slow electron traps in n-Ge MOS interfaces over a wide range of electrical field across gate oxides (Eox) are systematically investigated. It is found t...Show MoreMetadata
Abstract:
The properties of slow electron traps in n-Ge MOS interfaces over a wide range of electrical field across gate oxides (Eox) are systematically investigated. It is found through careful examination of the CV hysteresis that slow trapping under low Eox conditions is attributed only to electron trapping into existing slow traps. Under large Eox conditions, on the other hand, generation of slow electron traps and hole trapping are found to additionally affect the slow trapping characteristics. We propose a new measurement scheme to discriminate existing and generated slow electron traps and apply this method to the three different GeOx-based MOS interfaces in order to clarify the nature of slow traps. It is revealed from this analysis that a pre-plasma oxidation process reduces existing slow electron traps and improves slow trapping in low Eox. On the other hand, ultrathin Y2O3 insertion reduces generation of slow electron traps and improves slow trapping in high Eox.
Published in: 2018 IEEE International Electron Devices Meeting (IEDM)
Date of Conference: 01-05 December 2018
Date Added to IEEE Xplore: 17 January 2019
ISBN Information: