Can Kinetic Inductance in Low-Dimensional Materials Enable a New Generation of RF-Electronics?

Kinetic Inductance has been recently exploited at room temperature to create materials with inductance densities that exceed the traditional Faraday limit [1], [2]. In this work, for the first time, we develop a rigorous theoretical framework to uncover the physics and origin of kinetic inductance to identify/engineer the materials for addressing inductance-density and performance requirements in next generation passive devices for RF-ICs. Employing three different approaches (Drude model, Fermi sphere and the Boltzmann Transport Equation), we provide guidelines for optimally exploiting kinetic inductance in natural as well as engineered low-dimensional materials to simultaneously achieve maximum inductance-density and performance required for next-generation RF/wireless applications.