An a-InGaZnO TFT Gate Driver Circuit with Positive Feedback Effect

An a-InGaZnO TFT integrated gate driver circuit with a new inverter is proposed. The inverter features positive feedback from the output electrode to the gate electrode of the pull-up transistor, for suppressing the leakage current and enhancing the pull-up ability. Compared with the conventional designs, the proposed gate driver exhibits extended Vth shift margin from −8 V to +9 V.