SPICE-Compatible Modeling of Silicene Field Effect Transistor and Analog Circuit Design

We present review of the current transport behavior of silicene field effect transistor (FET) in which a monolayer of honeycomb lattice made of silicon is used as a transport channel. Based on this study, we introduce a SPICE-compatible model of the silicene FET. The proposed model is characterized by the channel dimension, temperature and externally applied voltage. In addition, vacancy defects in silicene material are also considered for current transport analysis. We have demonstrated application of our developed model for the design of an amplifier circuit. It is observed that silicene FET based amplifier can be powered by 0.4V with nearly 25dB gain and 200MHz unit gain bandwidth. We also designed an active integrator and frequency doubler using the silicene FFT-based amplifier and simulated. Our results demonstrate that the proposed SPICE-compatible silicene FET model can be used for very low-power and medium-to-low frequency analog circuit designs.