A Novel Approach to Analyze Current-Voltage Characteristics of Double Gated-Memristor

Memristor is a nano-electronic device which relates charge and flux. It is an excellent candidate for emerging technologies. Memristor exits as either two- or three-terminal device. In this work, As far as we know to the best of our knowledge we are for the first time proposing four terminal memristor known as double gated memristor. The structure of the double gated memristor resembles double gate MOSFET. The current-voltage analysis of double gated memristor is carried out in this paper work. It is observed that there is an improvement in the current of the double gated memristor in comparison to conventional memristor. It finds important application in analog, digital and neuromorphic circuits.