Simulation Technology of GaN Internal Matching Package Device

This paper reported a design method for GaN internal matching packaged devices was shown. Through testing structure designing, introduced a method of measure S-parameter of bonding wire group and extract inductance of bonding wire. By matching circuit packaging design and S-parameter measurement, established 3D electromagnetics model and simulated the design, then comparing simulation results with measured results, optimized simulation parameters and settings, which improved the accuracy of EM simulation. Demonstrate an internal matching power device with 2.1GHz-2.2GHz operation frequency and 55dBm output power. The input and output impedances measured by load-pull is close to the design value, which achieved the expected design performance.