Dependence of Characteristics of Directly-Bonded SiC/Si Junctions on Bonding Temperature

We measure electrical characteristics and die shear strength of directly-bonded n-4H-SiC/p⁺-Si junction with emphasis on their dependence on the annealing condition during bonding. In the bonding process, we perform lower-temperature annealing at the first step and higher-temperature one at the second step. By increasing annealing temperature at the first step, the impurity concentration obtained by C-V measurement gets close to the impurity concentration of SiC and the bonding strength become larger. These results show that directly-bonded SiC/Si junction characteristics depend on the annealing temperature at the first (lower-temperature) step in the bonding process.