Improved Current Collapse in AlGaN/GaN MOS-HEMTs with Dual Field-Plates

We fabricated AlGaN/GaN MOS-HEMTs with a dual-field-plate (FP), composed of gate-FP and source-FP. Using pulsed I-V technique, the effect of FP on current collapse was studied. Applying a high positive gate voltage resulted in current collapse suppression. It was found that the use of dual-FP was effective to significantly suppress the current collapse.