Challenge to off-roadmap silicon devices

Summary form only given. The annual Si Roadmap is now a technology driver in the Si CMOS miniaturization. It is difficult, however, to forecast realistically what is the post CMOS technology. On the other hand, several new Si devices have been proposed. The single electron tunneling devices have been demonstrated using novel Si process technology. The Esaki diode has been recently revived as the three-terminal NDR (Negative Differential Resistance) device. Moreover, the challenge of ultra-high performance devices using the strained Si substrate is also interesting. All of them are not on the roadmap, but possess unique device characteristics. Since we are just facing intrinsic hardships in CMOS technology, we hope that the off-roadmap devices might lead to opening a new way rather than extending the roadmap. In this paper, several off-roadmap Si devices are demonstrated and discussed for possible applications.