AlGaN Simulation Optimization for LEDs and Photodetectors

InAlGaN photodetectors are of great interest for applications involving detection and imaging in the whole spectral range. In this work we present phototransistors parameters simulation for improving efficiency and performance characteristics. We made optimization in active area for QW quantity, width and it doping. During photodetectors simulation the Al mole fraction in the collector and emitter was varied from X=0.2 to X=0.3. The collector and emitter thickness was taken as 0.9 μm. The doping level in the emitter and collector was varied from 10¹⁷ to 10¹⁹cm^-3. The p-GaN base thickness was taken as 0.3 μm, with doping of 10¹⁷-10¹⁸cm^-3. The electron and hole lifetimes in the base were taken as 12 ns.