Analysis of SenseFET Performance Degradation under Electric Stress

In paper, the performance degradation of SenseFET including on-resistance (Ron), saturated drain current (Idsat) and on-state breakdown voltage (BV) under electric stress is simulated. The electric stress conditions covering 0.9BV and BV stress of drain voltage while 1.1Imax stress of drain current are implemented and the mechanism of degradation is investigated. For conventional structure, Idsat is decreased by 5.74%, while Ron, BV is increased by 0.39%, 14.5%, respectively. To alleviate the performance degradation induced by trapped electrons in N-drift channel regions, the length of P-top regions and the position of field plates are adjusted. Based on simulation results, Idsat is decreased by 1.29% and Ron, BV is increased by 0.15%, 4.7%, respectively compared with no electric stress conditions.