Investigation of the relationship between the total dose effect and thickness of Al2O3 gate dielectric under gamma-ray irradiation

The total dose effect and its dependence on the thickness of Al2O3 gate dielectrics prepared by the atomic layer deposition (ALD) process have been investigated with various gamma-ray irradiation doses, based on the MOS structure of Al/Al2O3/Si and corresponding high frequency capacitance-voltage (C-V) characterization. The results show that there is a close relationship between the radiation hardness and thickness of the Al2O3 dielectrics, and a thinner Al2O3 dielectric is more sensitive to total dose irradiation than thicker ones.