Recessed-Gate PN iTFET to Improve Subthreshold Swing and Suppress Ambipolar

In this paper, we propose a new structure of Recessed-Gated-PN TFET with help by Inversion layer and pocket layer (RGPN iTFET) to achieve a great subthreshold swing (SS). The RGPN iTFET has also many advantages, as eliminating ambipolar effect, suppressing trap-assisted tunneling (TAT), raising ON current (I_ON (I_d @ V_G = V_D) and having a much better SS. The simulation results show that our device can reach I_ON = 1.61×10^-7 A/um, I_ON/I_OFF > 3.5×10⁷ at V_D=0.1V and a minimum and average SS (SS_min and SS_ave) of 11.4 and 24 mv/decade respectively.