Research on the Influence of Cooling Methods on Parasitic Parameters of IGBT Modules

With the increasing power density and application of IGBT modules, heat dissipation technology has become the key to IGBT module research. Institute of Electrical Engineering, Chinese Academy of Sciences proposed to apply evaporative cooling technology to IGBT modules. Evaporative cooling technology can better solve the problem of heat dissipation of IGBT modules. In an evaporative cooling environment, changes in the operating environment of the IGBT module may affect parasitic parameters within the module. Parasitic parameters are one of the factors that affect the operating state of the IGBT module. The presence of parasitic inductance inside the module can cause the module to generate a large number of voltage spikes during the switching process. Overvoltage can increase the collector current of the module and increase the internal temperature, which may cause device failure. This paper first uses SolidWorks software to model the IGBT, and then extracts the internal parasitic inductance and parasitic resistance of the module through the finite element software ANSYS Q3D Extractor. By setting the background material, the parasitic parameters inside the module under air cooling and evaporative cooling conditions are obtained. The comparison data obtains the influence of the cooling method on the parasitic parameters of the IGBT module, which provides a basis for further application of the evaporative cooling technology to the IGBT module.