Switching Behavior Modeling of High Current MOSFETs for 48 Volt Inverter Application

This paper presents results obtained during studying the switching behavior of state-of-the-art high current (300 A) discrete MOSFETs for low voltage application. Thereby a hard-switching topology with inductive switching in half-bridge configuration like in inverters is addressed. Simulation with a piecewise analytical model using the standard MOSFET equivalent circuit is compared to spice simulation with the model given by the manufacturer. The spice model includes an internal snubber circuit inherent to shielded gate low voltage MOSFETs. The simulations are compared to measurement results obtained from a double pulse test setup. The design and modeling of the measurement setup is also discussed in detail. The results of the simulation are compared in terms of switching transients and respective loss energies.