Raman analysis of Cu(In,Ga)(Se,S)2 absorbers obtained from atmospheric selenium-sulfur annealing of electrodeposited precursors

Two step atmospheric pressure processing of Cu(In,Ga)(Se,S)₂ absorbers is an industrially attractive technology to produce CIGS thin film modules. For this procedure, absorber sulfurization is required to increase the V_oc and thus the efficiency of the solar cells. Raman spectroscopy was used to qualitatively identify the presence of sulfur on the surface of the absorber. Moreover WDXRF and GDOES were used to quantitavely determine the sulfur content in the top of the absorbers. These results were used to globally quantify the Raman results.