New Class-F High Efficiency Multi-bias Optimised GaN HPA for C-band Applications

This paper describes a new design methodology for high power amplifier based on 0.25um GaN technology in C-band, with maximum efficiency over a wide range of output power. The main idea is to focus the design on matching the input and output impedance to have the better trade-off for high efficiency over a wide range of output power and frequency, by sweeping the drain voltage of the HPA. The measured HPA exhibits an average power-added efficiency (PAE) of 65% from 4.4 to 5.0 GHz with an output power of 10W and a power gain of 15dB at saturated power. This amplifier is able to be used in application which need reconfigurable output power from 0.5W to 10W with over 60% of PAE, or with Envelop Tracking architecture.